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Otimização dos parâmetros de crescimento do diamante CVD para aplicações em sensores óticos

Leandro Felício
Supervisors: Joana Catarina Martins Mendes, Miguel Angelo da Costa Neto
University: Universidade de Aveiro
Keywords: Boron doping; HFCVD; Polycrystalline diamond; Taguchi Method; abstract The deposition and growth of boron doped polycrystalline Diamond films, produced through HFCVD (Hot fillament chemical vapor deposition), was the subject of investigation for this work. Diamond is a material known for its excellent physical and chemical properties, being its hardness, optical transparency, chemical stability, boron doping dependent condutivity and biocompatibility, the most known ones. These properties make the Diamond a desirable material for HFCVD depositions. The films were characterized by Scanning electron microscopy, Raman Spectroscopy, Ray Diffraction, profilometry and UV-Vis and Infra-Red Spectroscopy. They were analyzed in terms of growth rate, FOM, width at half height, [111]/[220] ratio, roughness, light attenuation and resistivity. We can conclude that each parameter mentioned before has a set of different Taguchi factors to obtain the best individual result and uniting those, we obtained the best set of theoretical values to make the best, overall, film: 4% CH4/H2, 30 mbar of pressure, 50% of boron and between 15 to 20 sccm of argon.
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