Creating and sharing knowledge for telecommunications

Analysis on in-band distortion caused by switching amplifiers

Jang, W. ; Silva, N.V.S. ; Oliveira, A. ; Carvalho, N.B.C.

IET Microwaves, Antennas and Propagation Vol. 8, Nº 5, pp. 351 - 357, April, 2014.

ISSN (print): 1751-8725
ISSN (online):

Scimago Journal Ranking: 0,76 (in 2014)

Digital Object Identifier: 10.1049/iet-map.2013.0096

A hypothetical model is built to explain an in-band distortion mechanism of the class F amplifier. Using the model it is analytically proved that static non-linearities of switching amplifiers do not cause meaningful in-band distortion when the amplifiers are driven by ideal 1-bit digital RF signals. It is also found that short-term memory effects significantly contribute to in-band distortion. The analysis and the mechanism are tested and supported by MATLAB simulations. A system composed of a field-programmable gate array and a class F amplifier has been built and the in-band distortion mechanism is verified by measurement.