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Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

, ; Gomes, H.L.

Applied Physics Letters Vol. 99, Nº 8, pp. 083305 - 083305-3, August, 2011.

ISSN (print): 1077-3118
ISSN (online): 0003-6951

Scimago Journal Ranking: 2,81 (in 2011)

Digital Object Identifier: 10.1063/1.3628301

Abstract
Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. The amount of stored charge is determined from the optically induced discharging current transient as a function of applied voltage and oxide thickness. When the charge density exceeds 8 × 1017/m2, an irreversible soft breakdown transition occurs to a non-volatile memory diode.