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Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles

Gomes, H.L.

Thin Solid Films Vol. 522, Nº 0, pp. 407 - 411, November, 2012.

ISSN (print): 0040-6090
ISSN (online):

Scimago Journal Ranking: 0,90 (in 2012)

Digital Object Identifier: 10.1016/j.tsf.2012.08.041

Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.