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Diamond chemical vapour deposition on seeded cemented tungsten carbide substrates

Cabral, G.C. ; Mendes, J. C. ; Titus, E.T. ; Ali, N.A.

Thin Solid Films Vol. 515, Nº 1, pp. 158 - 163, September, 2006.

ISSN (print): 0040-6090
ISSN (online):

Scimago Journal Ranking: 1,14 (in 2006)

Digital Object Identifier: 10.1016/j.tsf.2005.12.148

Diamond particles were deposited onto seeded cemented tungsten carbide (WC–Co) substrates using conventional hot-filament chemical vapour deposition (HFCVD) and time-modulated CVD (TMCVD) processes. The substrates were pre-seeded ultrasonically with diamond particles of different grit sizes. In this investigation, we employ timed methane (CH4) gas modulations, which are an integral part of our TMCVD process in order to enhance diamond nucleation density. During diamond deposition using the conventional HFCVD process, methane gas flow was maintained constant. The total hydrogen flow into the reactor during TMCVD process was higher than in the HFCVD process. Hydrogen etching can be expectedly more prominent in the TMCVD process than in HFCVD of diamond particles. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that a proper selection of the diamond grit size for seeding using ultrasounds can lead to enhancement in the nucleation density values of about two orders of magnitude (107 to 109 cm− 2). The TMCVD process using the different seeded substrates can result in high nucleation density values of up to 1010 cm− 2.