Creating and sharing knowledge for telecommunications

An equivalent doping profile for CMOS substrate characterization

Quaresma, HJQ ; Santos, P. M. ; Serra, A.

Solid-State Electronics Vol. 79, Nº -, pp. 185 - 191, January, 2013.

ISSN (print): 0038-1101
ISSN (online):

Journal Impact Factor: 1,345 (in 2015)

Digital Object Identifier: 10.1016/j.sse.2012.06.017

Abstract
This work presents a non-destructive methodology to accurately estimate an equivalent substrate doping profile of a typical CMOS process. The methodology is based on simple experimental resistive measurements at different temperatures, obtained from a set of basic integrated test structures, and in 3D semiconductor simulations, to compute an estimate for the unknown CMOS process parameters. It is
demonstrated that the resultant box distribution equivalent doping profile could be used to evaluate the variation of the substrate impedance as a function of temperature and substrate contact distance.