Frequency Response Performance Analysis of p-i-n Photodiodes
Pereira, J. T.
Studies in Appl. Electromagnetics and Mechanics 10 – on Electromagnetic Systems Vol. 34, Nº 1, pp. 851 - 860, October, 2010.
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Abstract
This paper investigates the effects due to the absorption region width, bias voltage, temperature and wavelength of the incident light on the transit time limited frequency response of p-i-n photodiodes. The implemented numerical model is very general and enables us to obtain the frequency response of p-i-n photodiodes with an arbitrary electric field profile and non-uniform illumination. The bandwidth is seen to decrease when the absorption region width, bias voltage and temperature increase. For light incident on the p side, the bandwidth decreases when the wavelength of the incident light increases.
