Sub-Terahertz Memristor Switches Using MoS2 by Liquid–Liquid Interface Assembly
MINGATES, T.
; Ghatas, M.Ghatas
; Deuermeir, J.
; Kelly, A.
; Neilson, J.
; Coleman, J.
;
Mendes, L.
;
Vaz, J.
;
Matos, S.A.
; Lucci, L.
; Clemente, Antonio Clemente
; Pessoa, L.
; Fortunato, E. F.
; Martins, R. M.
; Kiazadeh, A.
Advanced Science Vol. , Nº , pp. - , June, 2026.
ISSN (print): 2198-3844
ISSN (online): 2198-3844
Scimago Journal Ranking: 3,29 (in 2025)
Digital Object Identifier: 10.1002/advs.75909
Abstract
This study demonstrates the first application-ready radio-frequency (RF) switches based on memristors fabricated via electrochemical exfoliation and liquid–liquid interfacial assembly. This 2D layer deposition method produces uniform, lowdefect bilayer molybdenum disulfide (MoS2) nanosheet networks without the high temperatures or hazardous gases typical of chemical vapor deposition, providing a low-cost, environmentally friendly route toward CMOS-compatible integration. The resulting devices exhibit robust unipolar resistive switching, simplifying biasing and lowering power consumption compared to bipolar solutions. Devices show reproducibility with 104 s retention and 100-cycle endurance. RF characterization confirms reliable operation across10–110 GHz with low insertion loss(0.42–0.9 dB), isolation above 18 dB, and an intrinsic cut-off frequency of ∼5.4 THz. The viability for integration into energy-efficient wireless communication platforms is assessed by simulation of a 24 × 24 elements reconfigurable intelligent surface. High gain (>21.6 dBi) and efficient beam steering (−60◦–60◦) across the
26.8–29.1 GHz band demonstrate the utility of these novel non-volatile RF switches in next generation mmWave communication, including 5G/6G and satellite systems.
