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The effect of the direction of incident light on the frequency response of p-i-n photodiodes

Pereira, J. T.

Studies in Appl. Electromagnetics and Mechanics 10 – on Electromagnetic Systems Vol. 30, Nº 1, pp. 417 - 424, October, 2008.

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Digital Object Identifier: 10.3233/978-1-58603-895-3-417

Abstract
This paper investigates the effects of the direction of the incident light on the transit time limited frequency response of p-i-n photodiodes. The simulation model starts from dividing the absorption region into any desired number of layers and, for each layer, the continuity equations are solved assuming that the carriers’ drift velocities are constant. The frequency response of the multilayer structure is calculated from the response of each layer using matrix algebra. The bandwidth is seen to increase when the light is incident on the p side. In this case the use of constant saturation velocities underestimates the device’s bandwidth.