Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers
Tomé, P. M.
Barradas, F. M. B.
Nunes, L. C.
Pedro, J. C.
IEEE Transactions on Microwave Theory and Techniques Vol. 0, Nº 0, pp. 0 - 0, July, 2020.
ISSN (print): 0018-9480
Scimago Journal Ranking: 1,21 (in 2018)
Digital Object Identifier: 10.1109/TMTT.2020.3006290
Charge-trapping phenomena in radio-frequency (RF) power amplifiers (PAs) based on GaN high-electron-mobility transistor (HEMT) technology are understood to be responsible for the dynamic self-biasing behavior that leads to a seemingly intractable slow dynamic residual nonlinearity in communications applications. For this reason, and based on recent developments in the characterization and modeling of charge-trapping phenomena, in this article we demonstrate how the dynamic self-biasing behavior of GaN HEMT-based PAs can be characterized, modeled, and compensated. First, we describe a method for the accurate characterization of the capture and emission dynamics of charge-trapping phenomena using transient two-tone large-signal RF measurements. Then, we demonstrate that the accurate modeling of these phenomena is contingent on the capture process being described by a state-variable time constant, rather than a fixed near-instantaneous time constant as is typically assumed. Finally, we propose a fully analog electronic circuit that implements an approximation of the Shockley-Read-Hall (SRH) statistics-based physical model of charge trapping to compensate the dynamic self-biasing behavior of a 15 W GaN HEMT-based PA.