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Resistive Switching of Silicon-Silver thin film devices in Flexible Substrates

Dias, C. ; Leitão, D. ; Ferreira, C. S. R. F. ; Gomes, H.L. ; Cardoso, SC ; Ventura, J.

Nanotechnology Vol. NA, Nº NA, pp. NA - NA, December, 2019.

ISSN (print): 0957-4484
ISSN (online): 1361-6528

Scimago Journal Ranking: 1,03 (in 2019)

Digital Object Identifier: 10.1088/1361-6528/ab5eb7

Novel applications for memory devices demand nanoscale
exible structures. In particular, resistive switching devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulatormetal
structure was fabricated and characterized on top of
exible substrates using a straightforward microfabrication process. We also showed that these substrates are
compatible with sputtering deposition. Resistive switching was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both
at and bent (under a radius of 3.5 mm) con gurations. The observed phenomenon was explained by the formation/rupture of metallic Ag laments in the otherwise insulating Si host layer