Observation of field-effect in a cross-linked polyfluorene semiconductor
Charas, A.
;
Alcácer, L.
; Pimentel, A. P.
; Conde, J. P. C.
;
Morgado, J.
Chemical Physics Letters Vol. 455, Nº 4-6, pp. 189 - 191, April, 2008.
ISSN (print): 0009-2614
ISSN (online):
Scimago Journal Ranking: 1,31 (in 2008)
Digital Object Identifier: 10.1016/j.cplett.2008.02.087
Abstract
A cross-linkable semiconducting polyfluorene was synthesised and used, in the cross-linked, insoluble
form, in the fabrication of field-effect transistors, FETs. This photopatternable polymer derives from
the well known poly(9,9-dioctylfluorene-alt-bithiophene), F8T2, which is one of the most studied semiconductors
for FETs. We find that FETs using this cross-linked polyfluorene semiconductor show p-type
behaviour with mobility 8.3 105 cm2/V s. Although this value is one order of magnitude smaller than
that found for similarly prepared F8T2-based FETs (6.8 104 cm2/V s), and which we mainly attribute to
disorder, the use of this type of polymer opens new perspectives in terms of device fabrication.
