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Observation of field-effect in a cross-linked polyfluorene semiconductor

Charas, A. ; Alcácer, L. ; Pimentel, A. P. ; Conde, J. P. C. ; Morgado, J.

Chemical Physics Letters Vol. 455, Nº 4-6, pp. 189 - 191, April, 2008.

ISSN (print): 0009-2614
ISSN (online):

Journal Impact Factor: 2,169 (in 2008)

Digital Object Identifier: 10.1016/j.cplett.2008.02.087

Abstract
A cross-linkable semiconducting polyfluorene was synthesised and used, in the cross-linked, insoluble
form, in the fabrication of field-effect transistors, FETs. This photopatternable polymer derives from
the well known poly(9,9-dioctylfluorene-alt-bithiophene), F8T2, which is one of the most studied semiconductors
for FETs. We find that FETs using this cross-linked polyfluorene semiconductor show p-type
behaviour with mobility 8.3  105 cm2/V s. Although this value is one order of magnitude smaller than
that found for similarly prepared F8T2-based FETs (6.8  104 cm2/V s), and which we mainly attribute to
disorder, the use of this type of polymer opens new perspectives in terms of device fabrication.