A Single-Ended Modified Class-E PA With HD2 Rejection for Low-Power RF Applications
IEEE Solid-State Circuits Letters Vol. 1, Nº 1, pp. 22 - 25, January, 2018.
ISSN (print): 2573-9603
Journal Impact Factor: (in )
Digital Object Identifier: 10.1109/LSSC.2018.2803450
This letter presents a fully integrated single-ended power amplifier for ultralow-power applications. The single-ended configuration is possible due to a choke-inductor less output network capable of rejecting the second-harmonic emission. A switching duty-ratio lower than 50% avoids the impedance transformation output network traditionally required for proper class-E operation. At 2.45 GHz, the PA (including the driver) delivers 1.4 dBm to a 50 Ω load and achieves an overall efficiency of 51% while complying with the spurious emission regulation. The prototype was fabricated in 0.13 μm CMOS.