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Memristors Using Solution-Based IGZO Nanoparticles

Gomes, H.L.

ACS Omega Vol. 2, Nº 11, pp. 8366 - 8372, November, 2017.

ISSN (print): 2470-1343
ISSN (online):

Scimago Journal Ranking: 0,75 (in 2017)

Digital Object Identifier: 10.1021/acsomega.7b01167

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Solution-based indium−gallium−zinc oxide
(IGZO) nanoparticles deposited by spin coating have been
investigated as a resistive switching layer in metal−insulator−
metal structures for nonvolatile memory applications. Opti-
mized devices show a bipolar resistive switching behavior, low
programming voltages of ±1 V, on/off ratios higher than 10,
high endurance, and a retention time of up to 104 s. The better
performing devices were achieved with annealing temperatures
of 200 °C and using asymmetric electrode materials of
titanium and silver. The physics behind the improved
switching properties of the devices is discussed in terms of the oxygen deficiency of IGZO. Temperature analysis of the conductance states revealed a nonmetallic filamentary conduction. The presented devices are potential candidates for the integration of memory functionality into low-cost System-on-Panel technology.