Frequency Response Optimization of Dual Depletion InGaAs/InP PIN Photodiodes
Pereira, J. T.
Torres , J.
Photonic Sensors Vol. 6, Nº 1, pp. 63 - 70, January, 2016.
ISSN (print): 1674-9251
ISSN (online): 2190-7439
Scimago Journal Ranking: 0,43 (in 2016)
Digital Object Identifier: 10.1007/s13320-015-0296-2
The frequency response of a dual depletion p-i-n (PIN) photodiode structure is investigated. It is assumed that the light is incident on the N side and the drift region is located
between the N contact and the absorption region. The numerical model takes into account the transit time and the capacitive effects and is applied to photodiodes with non-uniform illumination and linear electric field profile. With an adequate choice of the device’s structural parameters, dual
depletion photodiodes can have larger bandwidths than the conventional PIN devices.