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A New Double Input-Double Output Complex Envelope Amplifier Behavioral Model Taking Into Account Source and Load Mismatch Effects

Zargar, H. Z. ; Banai, A. B. ; Pedro, J. C.

IEEE Trans. on Microwave Theory and Tech. Vol. 63, Nº 2, pp. 766 - 774, February, 2015.

ISSN (print): 0018-9480
ISSN (online): 0018-9480

Journal Impact Factor: 2,711 (in 2008)

Digital Object Identifier: 10.1109/TMTT.2014.2387842

Abstract
This paper presents a double input-double output bilateral
low-pass equivalent amplifier behavioral model that takes
into account input source and output load terminationmismatches.
The model is intended for the system-level simulation of amplifier
chains subjected to wideband modulated signals, since it can
predict the device's input and output scattered waves and their
memory effects, in a wide range of voltage standing wave ratios
(VSWR). In addition, the model extraction methodology, and its
associated laboratory test bench are discussed, noting the limitations
of conventional setups for behavioral model extraction and
validation. The model is validated comparing the predicted and
measured data of a real 15 W GaN based PA circuit attached to
different loads. The obtained results show that, in terms of normalized
mean square error, this model can provide dB for
VSWR in comparison to a much poorer performance of the
conventional single input-single output model.