Frequency response performance analysis of p-i-n photodiodes
Pereira, J. T.
Frequency response performance analysis of p-i-n photodiodes, Proc International Symp. on Electromagnetic Fields in Mechatronics, Electrical and Electronic Engineering - ISEF, Arras, France, Vol. 1, pp. 231 - 232, September, 2009.
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Abstract
This paper investigates the combined effects due to the absorption region width, temperature and wavelength of the incident light on the transit time limited frequency response of p-i-n photodiodes. The implemented numerical model is very general and enables us to obtain the frequency response of p-i-n photodiodes with an arbitrary electric field profile and non-uniform illumination. The bandwidth is seen to decrease when the absorption region width and the temperature increase. For light incident on the p side, the bandwidth decreases when the wavelength of the incident light increases.
