For reconfigurable radios where the signals can be easily routed from one band to another band, new radio frequency switches (RF) are a fundament. The main factor driving the power consumption of the reconfigurable intelligent system (RIS) is the need for an intermediate device with static power consumption to maintain a certain surface configuration state. Since power usage scales quadratically with the RIS area, there is a relevant interest in mitigating this drawback so that this technology can be applied to everyday objects without needing such a high intrinsic power consumption. Current switch technologies such as PIN diodes, and field effect transistors (FETs) are volatile electronic devices, resulting in high static power. In addition, dynamic power dissipation related to switching event is also considerable. Regarding energy efficiency, non-volatile radio frequency resistive switch (RFRS) concept may be better alternative solution due to several advantages: smaller area, zero-hold voltage, lower actuation bias for operation, short switching time, scalability and capable to be fabricated in the backend-of-line of standard CMOS process.