A 20 dB Gain Two-Stage Low-Noise Amplifier with High Yield for 5 GHz Applications
Póvoa , R. P.
A 20 dB Gain Two-Stage Low-Noise Amplifier with High Yield for 5 GHz Applications, Proc International Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design - SMACD, Prague, Czech Republic, Vol. , pp. - , July, 2018.
Digital Object Identifier: 10.1109/SMACD.2018.8434917
This paper presents the design of a two-stage low-
noise amplifier (LNA) in a standard 130 nm CMOS technology,
operating around 5 GHz, and fully synthesized with an automatic
yield-aware integrated circuit (IC) design flow. The topology
described in this paper does not require external bias, and is
composed of two common-source amplifying stages and a
subsequent common-drain output buffer. Simulation results of a
high yield solution achieved by AIDA-C, a state-of-the-art multi-
objective circuit design tool, show that a forward gain of around
20 dB, with a noise figure around 2.25 dB and a 1.3 GHz
bandwidth can be achieved with this topology, draining less than
7 mA from a 1 V voltage supply source. Finally, the results
achieved in this work are compared with a set of previously
published LNA topologies, proving the benefits of both the
topology and the automatic IC design tool.