Charge trapping at the polymer-metal oxide interface as a first step in the electroforming of organic-inorganic memory diodes
Bory, B. F.
; Rocha, R.F
; de Leeuw, D.D.M.
; Meskers, S.C.J.
Charge trapping at the polymer-metal oxide interface as a first step in the electroforming of organic-inorganic memory diodes, Proc SPIE, San Diego, United States, Vol. 9569, pp. NA - NA, September, 2015.
Digital Object Identifier: 10.1117/12.2186577
Diodes containing a layer of aluminum oxide combined with a layer of π-conjugated polymer show nonvolatile memory effects after they have been electroformed. Electroforming is induced by application high bias voltage close to the limit for dielectric breakdown and can be performed reliably and with high yield on organic-inorganic hybrid diodes with controlled oxide thickness. Here we investigate the initial stage of the electroforming process and show through temperature dependent current-voltage characterization that electrons are trapped in deep traps at the interface between π-conjugated polyspirofluorene polymer and the aluminum oxide. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.