Modeling double depletion PIN photodiodes using the Finite Element Method
Torres, J. Torres
;
Pereira, J. T.
Modeling double depletion PIN photodiodes using the Finite Element Method, Proc Conf. on Telecommunications - ConfTele, Castelo Branco, Portugal, Vol. 1, pp. 1 - 4, May, 2013.
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Abstract
The finite element method (FEM) is used to compute the frequency response of dual depletion PIN photodiodes. The devices are assumed to have the drift region next to the N contact and that the light is incident on the N side. Both the transit time and the capacitive effects are included in the model which also takes into account the effects related to non-uniform illumination and variable electric field in the absorption region. The results from FEM compare well with those from a semi-analytical model and show that, by an adequate choice of the structural parameters, these devices can have larger bandwidths than those obtained by the conventional PIN photodiodes.
