Bandwidth Modeling and Optimization of PIN photodiodes
Fernandes, C.F.
;
Pereira, J. T.
Bandwidth Modeling and Optimization of PIN photodiodes, Proc Conf. on Telecommunications - ConfTele, Lisbon, Portugal, Vol. 1, pp. 1 - 4, April, 2011.
Digital Object Identifier: 0
Abstract
This paper presents a very general and complete numerical model which is used in the calculation and optimization of the bandwidth of PIN photodiodes. The model takes into account not only the transit time effects but also the capacitive effects. These combined effects are seen to limit the bandwidth to a maximum value which decreases when the area and the series resistance of the device increase. The capacitive effects determine the bandwidth of short devices which seems to be independent of bias voltage and the direction of incident light.
