Fully Integrated Switched Dual-Band CMOS LNA for 802.11b/g WLAN and WiMAX applications
; Gomes, P.
Costa Freire, J.
Fully Integrated Switched Dual-Band CMOS LNA for 802.11b/g WLAN and WiMAX applications, Proc European Microwave Integrated Circuits - EuMIC, Amsterdam, Netherlands, Vol. , pp. 397 - 400, October, 2012.
Digital Object Identifier:
A fully integrated switchable dual-band low-noise
amplifier (DB-LNA) for 802.11b/g and WiMAX applications is
presented. By using switch effective inductance technique for the
input matching network (IMN) and a switched LC tank to tune
the amplifier gain, dual-band operation for 2.4 GHz and 3.5 GHz
bands is achieved. Using a standard 0.18um CMOS process, a
dual-band LNA with chip size comparable to a single-band one
is designed. The DB-LNA exhibits a noise figure of 3.6 dB and
3.7 dB, input return loss of -12 dB and -19 dB, a power gain of
18 dB and 20 dB at the two frequency bands, respectively.