Frequency Response Optimization of Dual Depletion InGaAs/InP PIN Photodiodes
Pereira, J. T.
; Torres, J. Torres
Frequency Response Optimization of Dual Depletion InGaAs/InP PIN Photodiodes, Proc International Symp. on Electromagnetic Fields in Mechatronics, Electrical and Electronic Engineering - ISEF, Funchal - Madeira, Portugal, Vol. 1, pp. 1 - 8, September, 2011.
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Abstract
A very detailed numerical analysis of the frequency response of dual depletion PIN photodiodes is presented. This work assumes that the drift region is next to the N contact and the light is incident on the N side. Both the transit time and the capacitive effects are included in the model which also takes into account the effects related to non uniform illumination and variable electric field in the absorption region. It is seen that, by an adequate choice of the structural parameters, these devices can have larger bandwidths than those obtained by the conventional PIN photodiodes.
