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Frequency Response Analysis of Dual Depletion PIN Photodiodes

Fernandes, C.F. ; Pereira, J. T.

Frequency Response Analysis of Dual Depletion PIN Photodiodes, Proc Portuguese-Spanish Conf. in Electrical Engineering, Ponta Delgada, Açores, Portugal, Vol. 1, pp. 1 - 4, July, 2011.

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Abstract
This paper presents the frequency response analysis of dual depletion PIN photodiodes. This structure differs from the conventional PIN photodiode because an intrinsic layer of the same semiconductor material as the N and P regions is placed next to the absorption region. The simulation model takes into account the capacitive and the transit time effects, and can be applied to multilayer structures in situations of non-uniform illumination and arbitrary electric field profile. The results indicate that better bandwidths may be obtained with this type of structure compared to those for the conventional PIN photodiode.