| PROJECT: | SUPERHARD IC - Silicon Carbide Used in Potentially disruptive Emerging RadiationHARDened Instrument Components | |||||
| ACRONYM: | SUPERHARD IC | |||||
| MAIN OBJECTIVE: | - To bring a radical new capability to the European space sector in the manufacture of
- To manufacture Silicon Carbide (SiC) bipolar components at the KTH Royal Institute of Technology, Sweden, which incorporate a unique radiation-hardening diamond encapsulation and passivation, developed by the Instituto de Telecomunicações, Portugal. |
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| Reference: | N.A. | |||||
| Funding: | Swedish National Space Board | |||||
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| Team: | Joana Catarina Martins Mendes | |||||
| Groups: | Integrated Circuits – Av | |||||
| Partners: | KTH, Space Surrey Center | |||||
| Local Coordinator: | Joana Catarina Martins Mendes |
This project falls under the following United Nations Strategic Development Goals (SDGs):
No publications associated with this project.