| PROJECT: | Model Extraction of GaN Transistors | |||||
| ACRONYM: | MEGaN | |||||
| MAIN OBJECTIVE: | The main objective of MEGaN is exactly to propose and extract a nonlinear electro-thermal model of GaN HEMTs encapsulated and in die form. For that, first a complete small signal equivalent circuit extraction set-up will be created, which will be then complemented by a nonlinear pulsed I/V (Ids(Vgs,Vds)), Q/V (Cgs(Vgs) and Cgd(Vgd)) and thermal characterization. The electro-thermal model thus proposed will be validated for output power, power added efficiency and linearity, by the design and test of a microwave power amplifier prototype. So, a final objective of MEGaN is also to present a preview of the expected capabilities of those devices for RF applications. | |||||
| Reference: | POCTI/ESE/45050/2002 | |||||
| Funding: | FCT/POCTI | |||||
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| Team: | José Carlos Esteves Duarte Pedro, Nuno Miguel Gonçalves Borges de Carvalho, Pedro Miguel da Silva Cabral | |||||
| Groups: | Radio Systems – Av | |||||
| Partners: | ||||||
| Local Coordinator: | José Carlos Esteves Duarte Pedro |
This project falls under the following United Nations Strategic Development Goals (SDGs):
No publications associated with this project.