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Project: Model Extraction of GaN Transistors

Acronym: MEGaN
Main Objective: The main objective of MEGaN is exactly to propose and extract a nonlinear electro-thermal model of GaN HEMTs encapsulated and in die form. For that, first a complete small signal equivalent circuit extraction set-up will be created, which will be then complemented by a nonlinear pulsed I/V (Ids(Vgs,Vds)), Q/V (Cgs(Vgs) and Cgd(Vgd)) and thermal characterization. The electro-thermal model thus proposed will be validated for output power, power added efficiency and linearity, by the design and test of a microwave power amplifier prototype. So, a final objective of MEGaN is also to present a preview of the expected capabilities of those devices for RF applications.
Reference: POCTI/ESE/45050/2002
Funding: FCT/POCTI
Start Date: 01-01-2004
End Date: 31-12-2005
Team: Jose Carlos Esteves Duarte Pedro, Nuno Miguel Gonçalves Borges de Carvalho, Pedro Miguel da Silva Cabral
Groups: Radio Systems – Av
Partners:
Local Coordinator: Jose Carlos Esteves Duarte Pedro
Associated Publications