João Lucas Lessa Gomes

João Gomes

Former IT academic position:	External Author
Joining/Leaving IT dates:	01-09-2018 / 31-12-2022
Roles held in IT:	PhD Student
Former IT thematic line:	Wireless Technologies
Group:	Wireless Circuits – Av

https://www.orcid.org/0000-0003-1534-5426

Scientific Achievements

Publications

6Papers in Journals

J. Gomes, F. M. B. Barradas, L. C. Nunes, J. C. Pedro, On the Energy Nonconservation in the FET’s Equivalent Circuit Capacitance Model, IEEE Transactions on Electron Devices, Vol. 70, No. 9, pp. 4808 - 4814, September, 2023 | BibTex
B. Gonzalez, L. C. Nunes, J. Gomes, J. C. Mendes, J. L. Jimenez, A Simple Method to Extract the Thermal Resistance of GaN HEMTs from De-trapping Characteristics, IEEE Electron Device Letters, Vol. 44, No. 6, pp. 891 - 894, June, 2023 | BibTex
J. Gomes, L. C. Nunes, F. M. B. Barradas, J. C. Pedro, The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers, IEEE Transactions on Microwave Theory and Techniques, Vol. 70, No. 2, pp. 1377 - 1390, February, 2022,
| Abstract | BibTex
P. M. Tomé, F. M. B. Barradas, L. C. Nunes, J. Gomes, T.R. Cunha, J. C. Pedro, Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers, IEEE Transactions on Microwave Theory and Techniques, Vol. 0, No. 0, pp. 0 - 0, July, 2020,
| Abstract | BibTex
J. Gomes, L. C. Nunes, C. Gonçalves, J. C. Pedro, An Accurate Characterization of Capture Time Constants in GaN HEMTs, IEEE Transactions on Microwave Theory and Techniques, Vol. 67, No. 7, pp. 2465 - 2474, July, 2019 | BibTex
J. Gomes, L. C. Nunes, N. Sobolev, J. C. Pedro, Memristive Properties of GaN HEMTs Containing Deep‐Level Traps, Physica Status Solidi (B): Basic Research, Vol. 256, No. 5, pp. 1800387 - 1800387, December, 2018 | BibTex

8Papers in Conferences

L. C. Nunes, J. Gomes, F. M. B. Barradas, J. C. Pedro, A Simple Thermally Activated Trapping Model for AlGaN/GaN HEMTs, European Microwave Integrated Circuits - EuMIC, rome, Italy, Vol., pp. -, September, 2022,
| Abstract | BibTex
J. Gomes, L. C. Nunes, J. C. Pedro, On the Drain-to-Source Capacitance of Microwave FETs in Triode Region, IEEE International Microwave Symposium IMS, Denver, United States, June, 2022 | BibTex
J. Gomes, L. C. Nunes, F. M. B. Barradas, J. C. Pedro, A Qualitative Explanation of the AlGaN GaN HEMT Nonlinear Intrinsic Capacitances, Integrated Non-linear Microwave and Millimetre-wave Circuits Conf. - INMMIC, Cardiff, United Kingdom, April, 2022,
| Abstract | BibTex
J. Gomes, L. C. Nunes, J. C. Pedro, Explaining the Different Time Constants Extracted from Low Frequency Y22 and IDS-DLTS on GaN HEMTs, IEEE International Microwave Symposium IMS, Los Angeles, CA, USA, United States, August, 2020,
| Abstract | BibTex
J. Gomes, L. C. Nunes, J. C. Pedro, Transient Pulsed S-Parameters for Trapping Characterization, International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits - INMMIC, Cardiff, United Kingdom, July, 2020 | BibTex
P. M. Tomé, F. M. B. Barradas, L. C. Nunes, J. Gomes, T.R. Cunha, J. C. Pedro, A Transient Two-Tone RF Method for the Characterization of Electron Trapping Capture and Emission Dynamics in GaN HEMTs, IEEE International Microwave Symposium IMS, Los Angeles, United States, Vol., pp. 428 - 431, June, 2020,
| Abstract | BibTex
J. Gomes, L. C. Nunes, C. Gonçalves, J. C. Pedro, Deep-Level Traps’ Capture Time Constant and its Impact on Nonlinear GaN HEMT Modeling, International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits - INMMIC, Brive-la-Gaillarde, France, July, 2018 | BibTex
L. C. Nunes, J. Gomes, P. M. Cabral, J. C. Pedro, A Simple Method to Extract Trapping Time Constants of GaN HEMTs, IEEE International Microwave Symposium IMS, Philadelphia, United States, June, 2018 | BibTex

Other Scientific Achievements

5Awards

J. C. Pedro, J. Gomes, L. C. Nunes, IEEE Microwave Prize, The Microwave Prize is the oldest award granted by the Microwave Theory and Technology Society, dating back to 1955. The Microwave Prize recognizes the most significant contribution by a paper in the field of interest of the Microwave Theory and Technology Society that is published in the year preceding the year of deliberation., 01-06-2024
F. M. B. Barradas, L. C. Nunes, J. Gomes, J. C. Pedro, IEEE Microwave Prize, The Microwave Prize is the oldest award granted by the Microwave Theory and Technology Society, dating back to 1955. The Microwave Prize recognizes the most significant contribution by a paper in the field of interest of the Microwave Theory and Technology Society that is published in the year preceding the year of deliberation., 01-06-2024
L. C. Nunes, J. Gomes, F. M. B. Barradas, J. C. Pedro, 2022 EuMIC Prize, Recognition as the best paper presented at the “17th European Microwave Integrated Circuits Conference (EuMIC)”, held in Milan, Italy, as part of the European Microwave Week 2022., 01-09-2022
J. Gomes, 2020 MTT-S Graduate Student Fellowship Award, The IEEE Microwave Theory and Techniques Society (MTT-S) Graduate Student Fellowship awards are sponsored by the MTT-S to encourage and support graduate students from around the world who are interested in pursuing the field of microwave engineering. The fellowship honorees receive an award of US$6,000., 01-08-2020
J. Gomes, L. C. Nunes, J. C. Pedro, Best Student Paper Award INMMiC 2020 (Second Place), 2nd place of the best student paper award for the paper "Transient Pulsed S-Parameters for Trapping Characterization" presented at the International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits - VIRTUAL EVENT 16-17/07/2020 - Cardiff, UK, 01-07-2020

1Short Courses and Seminars

L. C. Nunes, F. M. B. Barradas, C. Gonçalves, J. Gomes, P. M. Tomé, T.R. Cunha, P. M. Cabral, J. C. Pedro, Long-Term Memory Effects in GaN Devices: From Modeling to Compensation, Spain, 09-2018

Other Contributions

1Refereeing Journals

Intrnl. Journal of RF and Microwave Computer-Aided Engineering
2020, 1 review(s);

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