Creating and sharing knowledge for telecommunications

Quantum Technology for a Networked World: Clocks, GPS and Metrology


on 21-05-2019

... Sir Peter Knight, Quantum Metrology Institute, UK National Physical Laboratory
​& Blackett Laboratory, Imperial College

Date & time: Tuesday, May 21st, 16:00h
Location: VA6, Civil Engineering Building, IST, Lisbon

Abstract:
Quantum Physics has focused on light, matter and their interaction, from the early days of quantum mechanics right down to the present day. Much of this work has concentrated on the nature of quantum correlations and coherence beyond what is allowed classically. Quantum Information Science in part has grown out of this progress: the quantum world allows information to be encoded, manipulated and transmitted in ways quite different from classical physics and quantum approaches to measurement to transform metrology. Now we are seeing the transition to technology, applying these insights in spectacular new ways.

Parallelism and entanglement, the characteristic features of the quantum world, enable us to perform precise measurements and to undertake information processing tasks which are peculiar to the quantum world: secure encryption, teleportation of quantum states and the speed up of certain classes of algorithms. The 21st Century has seen the emergence of a networked world, connected by global fibre-optic communications and mobile phones, with geo-location provided through GPS, and all this has changed our lives more dramatically than at any time since the industrial revolution. Quantum-enabled technology is ate the heart of this change. I will describe these developments and how the UK has invested substantially in the basic science and its exploitation. Some of these include communication systems immune to GPS jamming (of real importance for global security), as well as quantum sensors for medical applications (including cardiography, neurophysiology, etc.),
sensitive magnetometry, gyros, and geophysical surveying.

Short Bio:
Sir Peter Knight is one of the pioneers of quantum information science. A former president of the UK Institute of Physics and of the Optical Society of America, he has been the driving force behind the UK National Quantum Technologies Programme, an initiative that led to the creation of similar programmes in other countries around the world, as well as at EU level.
For more information about Sir Peter Knight, see: https://www.imperial.ac.uk/people/p.knight
More Information..

Defects responsible for the performance of GaN-based devices: LEDs, HEMTs


on 04-06-2019

... Alexander Ya Polyakov, National University of Science and Technology “MISiS”, Moscow

Date & time: Tuesday, June 4th, 15:00h
Location: Amphitheatre of the Instituto de Telecomunicações - Pólo de Aveiro, Building 19

Abstract:
Deep traps responsible for nonradiative recombination in GaN films, in green, blue, NUV LEDs, both as-grown and subjected to electron irradiation or to long time operation, will be discussed. Possibilities arising from nanopillar structures formation and interaction with localized surface plasmons will be described. Deep traps in the barriers and buffers of AlGaN/GaN, InAlN/GaN HEMTs giving rise to long-time gate and drain current transients will be analyzed, approaches to treatment of non-exponential current relaxations originating in variations of local electric field strength, local potential fluctuations will be described.

Short biography:
Since 2014 he is a Professor at the Department of Semiconductor Electronics and Physics of Semiconductors of the National University of Science and Technology “MISiS” in Moscow and Head of the laboratory "Wide-Bandgap Semiconductors and Devices" at this university. He is an author or co-author of more than 300 research papers, 2 monographs, multiple invited chapters in books on III-V semiconductors, and multiple review articles. His areas of expertise include deep traps in compound semiconductors, properties of heterojunctions and quantum wells, hydrogen passivation effects, radiation defects studies, interaction of III-N LEDs with localized surface plasmons. More Information..