Anirban Bandyopadhyay, Director, RF Strategic Applications, GlobalFoundries East Fishkill, NY. USA
DATE: January 15, 2020 | 16:00 – 17:00
VENUE: Instituto Superior Técnico, Room LT2, 4th Floor, TORRE NORTE
5G, the next generation cellular standard will cover different usage scenarios covering enhanced mobile broadband (eMBB), ultra-reliable, low latency communication (uRLLC) and low power massive machine-to-machine communication (mMTC). In this talk, I’ll focus on eMBB aspect of 5G - particularly the mmWave based eMBB. The talk will highlight different hardware architecture options and key figures of merits for the radio interface of mmWave 5G eMBB. The focus of the talk will be discussing different chip partitioning options and how differentiated mmWave silicon technologies like partially and fully depleted SOI, Silicon-Germanium BiCMOS can address the requirements and challenges for different mmWave 5G radio architectures for both User Equipments (UE) and Infrastructures (small cell, backhaul).
Anirban Bandyopadhyay is the Director, RF Strategic Applications within the Mobility & Wireless Infrastructure Business Unit of GLOBALFOUNDRIES, USA. His work is currently focused on hardware architecture & technology evaluations for emerging RF and mmWave applications. Prior to joining GLOBALFOUNDRIES, he was with IBM Microelectronics, New York and with Intel, California where he worked on different areas like RF Design Enablement, Silicon Photonics, signal integrity in RF & Mixed signal SOC’s. Dr. Bandyopadhyay did his PhD in Electrical Engineering from Tata Institute of Fundamental Research, India and Post-Doctoral research at Nortel, Canada and at Oregon State University, USA. He represents Global Foundries in different industry consortia on RF/mmWave applications and is a Distinguished Lecturer of IEEE Electron Devices Society.
Fernando Guarín, IEEE Fellow, Distinguished Member of technical Staff, GlobalFoundries East Fishkill, NY. USA
Date: January 15, 2020 | 15:00 – 16:00
Venue: Room LT2, 4th floor, North Tower, IST, Lisbon
Up to this point in the evolution of leading edge Silicon CMOS technologies the qualification of the latest nodes has been carried out using the methods and targets dictated by digital/logic applications. For RF applications the digital centric methodology and metrics will no longer be applicable. We will discuss the reliability impact and the qualification activities driven by the need to support reliable operation for RF circuit applications. The CMOS solutions for RF applications include the introduction of SOI that may introduce additional reliability considerations. The path to maintaining the advanced CMOS scaling cadence and new reliability limiting factors will be examined from the reliability perspective. We will also review the reliability requirements for RF reliability devices and applications as we prepare to introduce technologies to serve the 5G infrastructure requirements. A closer look will be given to Hot Carriers. The characterization, models and qualification methodologies will be put in the required perspective for the successful qualification and transfer of leading edge technologies to a manufacturing environment.
Dr. Fernando Guarín is a Distinguished Member of Technical Staff at Global Foundries in East Fishkill New York. He retired from IBM’s SRDC after 27 years as Senior Member of Technical Staff. He earned his BSEE from the “Pontificia Universidad Javeriana”, in Bogotá, Colombia, the M.S.E.E. degree from the University of Arizona, and the Ph.D. in Electrical Engineering from Columbia University, NY He has been actively working in microelectronic reliability for over 35 years. From 1980 until 1988 he worked in the Military and Aerospace Operations division of National Semiconductor Corporation. In 1988 he joined IBM’s microelectronics division where he worked in the reliability physics and modeling of Advanced Bipolar, CMOS and Silicon Germanium BiCMOS technologies. He is currently leading the team qualifying GlobalFoundries RF 5G technology offerings. Dr. Guarín is an IEEE Fellow, Distinguished Lecturer for the IEEE Electron Device Society EDS, where he has served in many capacities including; member of the IEEE’s EDS Board of governors, chair of the EDS Education Committee, Secretary for EDS. He was the EDS President 2018-2019.