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Differentiated Silicon Technologies for 5G Enhanced Mobile Broadband Radio interface on mmWave


on 15-01-2020

Anirban Bandyopadhyay, Director, RF Strategic Applications, GlobalFoundries East Fishkill, NY. USA

DATE: January 15, 2020 | 16:00 – 17:00
VENUE: Instituto Superior Técnico, Room LT2, 4th Floor, TORRE NORTE

Abstract:
5G, the next generation cellular standard will cover different usage scenarios covering enhanced mobile broadband (eMBB), ultra-reliable, low latency communication (uRLLC) and low power massive machine-to-machine communication (mMTC). In this talk, I’ll focus on eMBB aspect of 5G - particularly the mmWave based eMBB. The talk will highlight different hardware architecture options and key figures of merits for the radio interface of mmWave 5G eMBB. The focus of the talk will be discussing different chip partitioning options and how differentiated mmWave silicon technologies like partially and fully depleted SOI, Silicon-Germanium BiCMOS can address the requirements and challenges for different mmWave 5G radio architectures for both User Equipments (UE) and Infrastructures (small cell, backhaul).


Biography:
Anirban Bandyopadhyay is the Director, RF Strategic Applications within the Mobility & Wireless Infrastructure Business Unit of GLOBALFOUNDRIES, USA. His work is currently focused on hardware architecture & technology evaluations for emerging RF and mmWave applications. Prior to joining GLOBALFOUNDRIES, he was with IBM Microelectronics, New York and with Intel, California where he worked on different areas like RF Design Enablement, Silicon Photonics, signal integrity in RF & Mixed signal SOC’s. Dr. Bandyopadhyay did his PhD in Electrical Engineering from Tata Institute of Fundamental Research, India and Post-Doctoral research at Nortel, Canada and at Oregon State University, USA. He represents Global Foundries in different industry consortia on RF/mmWave applications and is a Distinguished Lecturer of IEEE Electron Devices Society.



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