Creating and sharing knowledge for telecommunications

Defects responsible for the performance of GaN-based devices: LEDs, HEMTs

on 04-06-2019

Alexander Ya Polyakov, National University of Science and Technology “MISiS”, Moscow

Date & time: Tuesday, June 4th, 15:00h
Location: Amphitheatre of the Instituto de Telecomunicações - Pólo de Aveiro, Building 19

Deep traps responsible for nonradiative recombination in GaN films, in green, blue, NUV LEDs, both as-grown and subjected to electron irradiation or to long time operation, will be discussed. Possibilities arising from nanopillar structures formation and interaction with localized surface plasmons will be described. Deep traps in the barriers and buffers of AlGaN/GaN, InAlN/GaN HEMTs giving rise to long-time gate and drain current transients will be analyzed, approaches to treatment of non-exponential current relaxations originating in variations of local electric field strength, local potential fluctuations will be described.

Short biography:
Since 2014 he is a Professor at the Department of Semiconductor Electronics and Physics of Semiconductors of the National University of Science and Technology “MISiS” in Moscow and Head of the laboratory "Wide-Bandgap Semiconductors and Devices" at this university. He is an author or co-author of more than 300 research papers, 2 monographs, multiple invited chapters in books on III-V semiconductors, and multiple review articles. His areas of expertise include deep traps in compound semiconductors, properties of heterojunctions and quantum wells, hydrogen passivation effects, radiation defects studies, interaction of III-N LEDs with localized surface plasmons.