@ARTICLE {20240,
author={P. M. Cabral and L. C. Nunes and T. R. RessurreiĆ§Ć£o and J. C. Pedro},
doi={10.1002/jnm.2128},
journal={International Journal of Numerical Modelling: Electronic Networks, Devices and Fields},
title={Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection},
year={2017},
month={January},
volume={30},
number={1},
pages={1-11},
ISSN={0894-3370}
}
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