@ARTICLE {1033,
author={P. M. Cabral and J. C. Pedro and N.B.C. Carvalho},
doi={},
journal={IEEE Trans. on Microwave Theory and Tech.},
title={Nonlinear device model of microwave power GaN HEMTs for high-power amplifier design},
year={2004},
month={November},
volume={52},
number={11},
pages={2585-2592},
ISSN={0018-9480}
}
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