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Model Extraction of GaN Transistors

Acronym MEGaN
Main objective The main objective of MEGaN is exactly to propose and extract a nonlinear electro-thermal model of GaN HEMTs encapsulated and in die form. For that, first a complete small signal equivalent circuit extraction set-up will be created, which will be then complemented by a nonlinear pulsed I/V (Ids(Vgs,Vds)), Q/V (Cgs(Vgs) and Cgd(Vgd)) and thermal characterization. The electro-thermal model thus proposed will be validated for output power, power added efficiency and linearity, by the design and test of a microwave power amplifier prototype. So, a final objective of MEGaN is also to present a preview of the expected capabilities of those devices for RF applications.
Reference POCTI/ESE/45050/2002
Name Model Extraction of GaN Transistors
Funding FCT/POCTI
Start date 01-01-2004
Ending date 31-12-2005
Team Jose Carlos Esteves Duarte Pedro ; Nuno Miguel Gonçalves Borges de Carvalho ; Pedro Miguel da Silva Cabral
Groups Radio Systems – Av
Partners
Local coordinator Jose Carlos Esteves Duarte Pedro
Other contributers ---

Project associated publications:

 
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